Catherine Dubourdieu is a Full Professor at Freie Universität Berlin and the Head of the Institute “Functional oxides for energy efficient information technology” (IFOX) at the Helmholtz-Zentrum Berlin. She earned an Engineer diploma and a MSc degree from Grenoble Institute of Technology in 1992 and a PhD degree in Physics from J. Fourier University (Grenoble) in 1995. She is the recipient of an ERC Advanced Grant 2022 on ferroelectric polar textures integrated on silicon. She focuses on functional oxides, particularly ferroelectrics, from materials (growth of thin films and advanced characterization) to device development for energy-efficient information technology.

Arnab De received his M.Sc. in Physics with a specialization in semiconductor physics from the University of Hyderabad, India, and his Ph.D. in Materials Engineering from the Indian Institute of Science, Bangalore, India, in 2021, focusing on perovskite oxide-based ferroelectric materials. From 2022 to 2024, he was a postdoctoral researcher at Sungkyunkwan University, studying the structure-property relations in HfO₂-based epitaxial thin films grown by Pulsed Laser Deposition. Since February 2024, Arnab has been with QM-IFOX, HZB in Berlin, where he focuses on device development for HfO₂ based ferroelectric tunnel junctions, specializing in Atomic Layer Deposition and electrical measurements.

Wassim Hamouda is a physicist specializing in the development and characterization of functional oxides for energy-efficient information technology. He earned his Ph.D. in Physics from Paris-Scaly University in 2022, where he conducted research on ferroelectric HfO₂ with a focus on the innovative application of photoelectron spectroscopy. This technique has been central to his investigations, allowing for a deeper understanding of the electronic properties and interface chemistry of materials. Following the completion of his doctoral studies, Wassim is currently with Helmholtz-Zentrum Berlin as a postdoctoral researcher where he focuses on the development of HfO₂ and AlScN-based ferroelectric tunnel junctions.

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